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Filament observation in metal-oxide resistive switching devices
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10.1063/1.4798525
/content/aip/journal/apl/102/12/10.1063/1.4798525
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798525
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic representation of the complete sample stack before the top electrode removal. (b)-(d) Cross sections of the 30-nm TiN top electrode (b) before material removal, (c) at an intermediate phase of the physical material removal, and (d) at the final stage of the TiN removal, respectively. The surface of HfO2 previously covered by the top electrode is now exposed to the C-AFM tip.

Image of FIG. 2.
FIG. 2.

(a) Measured I-V curve during the set transition, i.e., when the device switches from HRS to LRS. (b) C-AFM current map (50 mV bias) showing that the LRS is characterized by a high leakage current (∼1 nA). (c) Measured I-V curve during the reset transition, i.e., when the device switches back from LRS to HRS, under a negative voltage ramp. (d) C-AFM current map (50 mV bias) showing that the HRS is characterized by a low but non-negligible leakage. The top electrode is still visible indicating, although highly resistive, filaments are still present.

Image of FIG. 3.
FIG. 3.

(a) Device exposure for fresh memory element where no filaments are observed. The current map of the HfO2 layer is acquired with C-AFM at −100 mV bias, the absence of leakages clearly indicate the role of forming in the filament formation. (b) LRS after de-process flow, the top electrode is removed, and the C-AFM current maps are presented. The diameter of the filament is ∼50 nm, and the current flowing is in the range of nA. (c) De-process flow for the HRS. C-AFM current map presents filament with diameter in range 5–10 nm carrying currents in the pA range.

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/content/aip/journal/apl/102/12/10.1063/1.4798525
2013-03-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Filament observation in metal-oxide resistive switching devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798525
10.1063/1.4798525
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