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Electronic states in hydrogenated nanocrystalline silicon thin films detected by photocurrent technique
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10.1063/1.4798526
/content/aip/journal/apl/102/12/10.1063/1.4798526
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798526
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental photocurrent spectra of the nc-Si:H(n)/c-Si(p) heterostructure under zero bias voltage with temperature decreasing from (a) 300 to 50 K and (b) 50 to 15 K.

Image of FIG. 2.
FIG. 2.

Experimental photocurrent spectra of the nc-Si:H(n)/c-Si(p) heterostructure enlarged for photon energy from 1.0 to 1.3 eV and temperature from 300 to 50 K, where the solid and dotted curves are, respectively, for experimental and calculated results. The thermal activation energy for the first threshold photocurrent is plotted as open squares, and extrapolated by the dotted curve.

Image of FIG. 3.
FIG. 3.

Experimental photocurrent amplitude versus temperature for strong absorption at photon energy of 1.3 eV by the open diamond scatters, weak absorption at photon energies of 1.13/1.12/1.11/1.10 eV by the other open scatters, and the experimental dark Hall electron mobility versus temperature by the solid square scatters. Dashed and dotted curves are calculated results from Eqs. (4) and (3) , respectively. Solid curve is the calculated electron mobility.

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/content/aip/journal/apl/102/12/10.1063/1.4798526
2013-03-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic states in hydrogenated nanocrystalline silicon thin films detected by photocurrent technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798526
10.1063/1.4798526
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