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Energy band diagrams of the original (a) and the modified (b) CBIRD structures, showing the conduction and valence band edges, and the Fermi level under zero bias. The top contact is on the left side and the substrate is to the right.
PL spectrum and top illuminated spectral QE for a CBIRD device measured at 77 K. The inset shows the peak QE as a function of applied bias.
Dark current density (J d) as a function of applied bias, measured at various temperatures ranging from 19 K to 165 K. The inset shows temperature dependence of J d (over the same range as the main plot) at 0.1 V bias.
Calculated zero-bias conduction band (CB) profile near the hole barrier–absorber junction (located at 0.6 μm) for a set of structures with varying CB offset and doping profile (top panel), and the corresponding magnitudes of SRH generation-recombination rates under 0.25 V bias (bottom panel), with calculated J-V curves (inset).
Calculated energy band diagrams (top panel) and carrier densities (bottom panel) for the active region of a CBIRD structure under various biasing conditions.
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