1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Exclusion, extraction, and junction placement effects in the complementary barrier infrared detector
Rent:
Rent this article for
USD
10.1063/1.4798551
/content/aip/journal/apl/102/12/10.1063/1.4798551
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798551
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy band diagrams of the original (a) and the modified (b) CBIRD structures, showing the conduction and valence band edges, and the Fermi level under zero bias. The top contact is on the left side and the substrate is to the right.

Image of FIG. 2.
FIG. 2.

PL spectrum and top illuminated spectral QE for a CBIRD device measured at 77 K. The inset shows the peak QE as a function of applied bias.

Image of FIG. 3.
FIG. 3.

Dark current density (J d) as a function of applied bias, measured at various temperatures ranging from 19 K to 165 K. The inset shows temperature dependence of J d (over the same range as the main plot) at 0.1 V bias.

Image of FIG. 4.
FIG. 4.

Calculated zero-bias conduction band (CB) profile near the hole barrier–absorber junction (located at 0.6 μm) for a set of structures with varying CB offset and doping profile (top panel), and the corresponding magnitudes of SRH generation-recombination rates under 0.25 V bias (bottom panel), with calculated J-V curves (inset).

Image of FIG. 5.
FIG. 5.

Calculated energy band diagrams (top panel) and carrier densities (bottom panel) for the active region of a CBIRD structure under various biasing conditions.

Loading

Article metrics loading...

/content/aip/journal/apl/102/12/10.1063/1.4798551
2013-03-26
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Exclusion, extraction, and junction placement effects in the complementary barrier infrared detector
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798551
10.1063/1.4798551
SEARCH_EXPAND_ITEM