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InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 μm
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10.1063/1.4798558
/content/aip/journal/apl/102/12/10.1063/1.4798558
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798558
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic structures and energy band diagrams of the InAs metamorphic QWs grown on GaAs (sample 1) and InP (sample 2) substrates.

Image of FIG. 2.
FIG. 2.

5 × 5 μm2 AFM images of the InAs metamorphic QWs grown on (a) GaAs substrate (sample 1) and (b) InP substrate (sample 2).

Image of FIG. 3.
FIG. 3.

HRXRD (004) scanning curves of the InAs metamorphic QWs grown on GaAs substrate (sample 1) and InP substrate (sample 2).

Image of FIG. 4.
FIG. 4.

Raman scanning curves of the InAs metamorphic QWs grown on GaAs substrate (sample 1) and InP substrate (sample 2).

Image of FIG. 5.
FIG. 5.

XTEM images of (a) sample 1 and (b) sample 2.

Image of FIG. 6.
FIG. 6.

PL spectra of the two samples at various temperatures. The absorption bands of water are indicated.

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/content/aip/journal/apl/102/12/10.1063/1.4798558
2013-03-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4798558
10.1063/1.4798558
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