This work reports on InAsquantum wells(QWs)grown on GaAs-based metamorphic In0.83Al0.17As buffers for type-I mid-infrared (MIR) emission. X-ray diffraction and Raman measurements show that the GaAs-based quantum wells have similar lattice and strain conditions with the InP-based structure. Atomic force microscope shows the smoother surface of the structure on GaAs substrate. For the GaAs-based quantum wells, favorable photoluminescence emission at 2.9 μm at 300 K has been achieved, and the optical quality is comparable to the structure on InP substrate. It is promising to employ this metamorphic quantum well structure for the demonstration of GaAs-based antimony-free mid-infrared lasers.
Received 22 February 2013Accepted 14 March 2013Published online 26 March 2013
The authors wish to acknowledge the support of the National Basic Research Program of China under Grant No. 2012CB619202 and the National Natural Science Foundation of China under Grant Nos. 61275113 and 61204133.