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(a) XRD θ-2θ scan patterns for selected InxGa1−xN samples in the vicinity of the (0002) reflection. (b) XRD c-lattice parameter of InxGa1−xN alloys vs. In composition measured by RBS. The solid line shows the prediction of Vegard's law; the good agreement suggests that the InxGa1−xN layers are fully relaxed. (c) FWHM of the InxGa1−xN (0002) reflection vs. In composition.
(a) The thermal conductivity (Λ) at room temperature of InxGa1−xN alloys as a function of In fraction compared to the predictions of the modified Callaway model. Previously reported thermal conductivities of GaN, InN, and InxGa1−xN alloys are included for comparison. The open-square and open-circle is the thermal conductivity of pure GaN (Ref. 9 ) and pure InN (Ref. 10 ), respectively. The dashed line is calculated for the limit of large layer thickness; the solid line is calculation for a layer thickness of d = 200 nm. (b) Ratio of the measured thermal conductivity from this work to the calculated thermal conductivity (ΛDCM) at each thickness as a function of In content.
Summary of all InxGa1−xN samples investigated. The samples were grown by MOCVD or MBE method on sapphire substrates with GaN or AlN buffer layers at four institutions. The composition is determined by XRD and RBS. The thermal conductivities are measured by time-domain thermoreflectance.
Material parameters of InN and GaN used in the Callaway-type model of the thermal conductivity of InxGa1−xN alloys.
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