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Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications
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10.1063/1.4799148
/content/aip/journal/apl/102/12/10.1063/1.4799148
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4799148
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XPS depth profiling of TiOx/TiOy bilayered stack. 2p portions of the XPS spectra of the (b) TiOx layer, which was as TE interface region and (c) TiOy layer, which was as bulk region.

Image of FIG. 2.
FIG. 2.

I-V characteristics of the device with sequentially varying Icc having the structure Ti/TiOx/TiOy/Pt: log-linear plots of (a) 1st–10th sweeps and (c) 11th and 12th sweeps. The cumulative probability of current distribution of (b) RRAM device under 100 μA Icc and (d) 300 μA Icc.

Image of FIG. 3.
FIG. 3.

The non-linearity is defined as the ratio ISET/I at 1/2VSET during the SET operation. The non-linearity in the LRS depends on the Icc. At low Icc, the non-linearity is almost zero. This is indicative of linear (ohmic) conductive behavior. At high Icc, the sneak-path current in the LRS is suppressed by the non-linearity.

Image of FIG. 4.
FIG. 4.

Thermal simulation in TiOx/TiOy bilayered structure under high operating currents (by utilizing COMSOL MULTIPHYSICS).

Image of FIG. 5.
FIG. 5.

A schematic diagram of the suggested switching mechanism. The bilayered structure under (a) SET and (b) RESET operations with lower Icc, and (c) SET and (d) RESET operations with higher Icc.

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/content/aip/journal/apl/102/12/10.1063/1.4799148
2013-03-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/12/10.1063/1.4799148
10.1063/1.4799148
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