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Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates
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10.1063/1.4799149
/content/aip/journal/apl/102/13/10.1063/1.4799149
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4799149
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Figures

Image of FIG. 1.
FIG. 1.

2D and 3D AFM images of the grown structures: (a) sample (A)with only 4 MLs of GaAs deposited at 600 °C, (b) sample (B) similar to (A) with additionally 3 MLs of InAs deposited at 500 °C, (c) sample (C) similar to (B) with an additional GaAs capping layer deposited at the same InAs growth temperature and (d) Sample (D) similar to (C) with additional 2 MLs of GaAs deposited at 600 °C for improved capping.

Image of FIG. 2.
FIG. 2.

PL spectra of InAs/GaAs QDs (a–d) were taken from four different locations of the sample at low laser excitation powers. The inset of (c) shows a scanning electron microscope image of a single InAs/GaAs QD grown directly on silicon. The inset of (d) illustrates the PL spectra taken at three different excitation laser powers.

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/content/aip/journal/apl/102/13/10.1063/1.4799149
2013-04-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4799149
10.1063/1.4799149
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