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X-ray probe of GaN thin films grown on InGaN compliant substrates
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10.1063/1.4799279
/content/aip/journal/apl/102/13/10.1063/1.4799279
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4799279
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(002) ω scans of (a): Atemp (b): sample A, (c): Btemp and (d): sample B. The inset of (d) shows the residuals of Lorentz and Voigt fits with respect to experimental data.

Image of FIG. 2.
FIG. 2.

RSMs of both symmetric (002) and asymmetric (105) reflections. (a): (002) plane and (b): (105) plane mappings of Atemp, and (c): (002) plane and (d): (105) plane mappings of sample A, and (e): (002) plane and (f): (105) plane mappings of sample B. The unit rlu is defined as λ/2d, and qx−y//[100], qz//[001].

Image of FIG. 3.
FIG. 3.

Williamson–Hall plots for (00l) reflections of samples (a) A and (b) B. Note that (006) reflection of sample B is too weak to be detected in HRXRD mode, so only (002) and (004) are shown. But it will not influence the slope rand-size relationship of samples A and B.

Image of FIG. 4.
FIG. 4.

GIXRD of sample A with different grazing incident angle αi. (a) ω-scan and (c) θ-2θ scan of (100) plane, αi = 0.2° ∼ 1.75°; the depth dependences of (b) the ω-scan FWHM and (d) the a-axis lattice parameter.

Image of FIG. 5.
FIG. 5.

Sample B: the depth dependences of (a) (100) plane ω-scan FWHM and (b) a-axis lattice parameter; Btemp: (c) XPS depth profile of In3d and Ga2p and (d) the depth dependence of In/Ga ratio.

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/content/aip/journal/apl/102/13/10.1063/1.4799279
2013-04-02
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: X-ray probe of GaN thin films grown on InGaN compliant substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4799279
10.1063/1.4799279
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