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I-V characteristics of Zn:SiO2 RRAM devices with different operating compliance currents of 10 μA and 100 μA, respectively. The inset is the structure of device.
(a) and (b) are the current temperature relationship for 10 μA and 100 μA current compliance, respectively. (c) and (d) are their corresponding hopping equation plots.
The activation energy and voltage properties for 10 μA and 100 μA compliance current operating situation.
Model of hopping distance variation which is induced by the diameter change of metal precipitates.
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