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Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
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10.1063/1.4799655
/content/aip/journal/apl/102/13/10.1063/1.4799655
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4799655
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

I-V characteristics of Zn:SiO2 RRAM devices with different operating compliance currents of 10 μA and 100 μA, respectively. The inset is the structure of device.

Image of FIG. 2.
FIG. 2.

(a) and (b) are the current temperature relationship for 10 μA and 100 μA current compliance, respectively. (c) and (d) are their corresponding hopping equation plots.

Image of FIG. 3.
FIG. 3.

The activation energy and voltage properties for 10 μA and 100 μA compliance current operating situation.

Image of FIG. 4.
FIG. 4.

Model of hopping distance variation which is induced by the diameter change of metal precipitates.

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/content/aip/journal/apl/102/13/10.1063/1.4799655
2013-04-02
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4799655
10.1063/1.4799655
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