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Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
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10.1063/1.4799655
/content/aip/journal/apl/102/13/10.1063/1.4799655
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4799655
/content/aip/journal/apl/102/13/10.1063/1.4799655
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/content/aip/journal/apl/102/13/10.1063/1.4799655
2013-04-02
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4799655
10.1063/1.4799655
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