1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Sensitivity analysis of electron leakage in III-nitride light-emitting diodes
Rent:
Rent this article for
USD
10.1063/1.4799672
/content/aip/journal/apl/102/13/10.1063/1.4799672
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4799672
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy band diagram of the LED pn-junction at a current density of 30 A/cm2 with illustration of the electron leakage current from the active region into the p-doped region and the corresponding hole injection.

Image of FIG. 2.
FIG. 2.

Vertical energy band diagram and carrier density profiles for the LED with EBL.

Image of FIG. 3.
FIG. 3.

Current density profiles for electrons and holes calculated with (solid lines) and without EBL (dashed lines).

Image of FIG. 4.
FIG. 4.

Effect of parameter variations on the electron leakage rate at a current density of 200 A/cm2.

Loading

Article metrics loading...

/content/aip/journal/apl/102/13/10.1063/1.4799672
2013-04-01
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sensitivity analysis of electron leakage in III-nitride light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4799672
10.1063/1.4799672
SEARCH_EXPAND_ITEM