1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Nonvolatile bipolar resistive switching in amorphous Sr-doped LaMnO3 thin films deposited by radio frequency magnetron sputtering
Rent:
Rent this article for
USD
10.1063/1.4800229
/content/aip/journal/apl/102/13/10.1063/1.4800229
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4800229
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic configuration of the Ag/a-LSMO/Pt memory cell and the measurement setup. (b) Cross sectional TEM image of the Ag/a-LSMO/Pt/Ti/SiO2 structure. (c) High resolution TEM image of the a-LSMO thin film, showing the amorphous structure with the selected electron diffraction pattern in the inset. (d) RBS analysis of the LSMO film deposited by RF magnetron sputtering at 60 °C with 20% oxygen content.

Image of FIG. 2.
FIG. 2.

The initial electroforming process and subsequent I-V cycle of the Ag/a-LSMO/Pt memory cell shown in (a) linear scale and (b) semilogarithmic scale. Numbered arrows indicate voltage sweeping directions.

Image of FIG. 3.
FIG. 3.

(a) Reproducible RS behaviors and (b) endurance performances of the Ag/a-LSMO/Pt memory cell up to 100 switching cycles. The HRS and LRS resistance values were read out at 50 mV in each sweep. (c) Evolution of threshold voltages of the Ag/a-LSMO/Pt memory cell as a function of the switching cycle. (d) Retention performance of the Ag/a-LSMO/Pt memory cell under a reading voltage of 50 mV at RT, indicating stable HRS and LRS for up to 104 s at RT.

Image of FIG. 4.
FIG. 4.

(a) Linear fittings of the I-V curve of the Ag/a-LSMO/Pt memory cell plotted in double logarithmic scale for the positive voltage region and the corresponding slopes for each portion. (b) Dependence of t s on the cell voltage V C. (c) Temperature dependence of the R ON and R OFF of the Ag/a-LSMO/Pt memory cell. α denotes the temperature coefficient resistance. (d) R ON and I RESET in dependence on the CC, indicating the multibit storage capability.

Loading

Article metrics loading...

/content/aip/journal/apl/102/13/10.1063/1.4800229
2013-04-03
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile bipolar resistive switching in amorphous Sr-doped LaMnO3 thin films deposited by radio frequency magnetron sputtering
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/13/10.1063/1.4800229
10.1063/1.4800229
SEARCH_EXPAND_ITEM