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(a) Schematic configuration of the Ag/a-LSMO/Pt memory cell and the measurement setup. (b) Cross sectional TEM image of the Ag/a-LSMO/Pt/Ti/SiO2 structure. (c) High resolution TEM image of the a-LSMO thin film, showing the amorphous structure with the selected electron diffraction pattern in the inset. (d) RBS analysis of the LSMO film deposited by RF magnetron sputtering at 60 °C with 20% oxygen content.
The initial electroforming process and subsequent I-V cycle of the Ag/a-LSMO/Pt memory cell shown in (a) linear scale and (b) semilogarithmic scale. Numbered arrows indicate voltage sweeping directions.
(a) Reproducible RS behaviors and (b) endurance performances of the Ag/a-LSMO/Pt memory cell up to 100 switching cycles. The HRS and LRS resistance values were read out at 50 mV in each sweep. (c) Evolution of threshold voltages of the Ag/a-LSMO/Pt memory cell as a function of the switching cycle. (d) Retention performance of the Ag/a-LSMO/Pt memory cell under a reading voltage of 50 mV at RT, indicating stable HRS and LRS for up to 104 s at RT.
(a) Linear fittings of the I-V curve of the Ag/a-LSMO/Pt memory cell plotted in double logarithmic scale for the positive voltage region and the corresponding slopes for each portion. (b) Dependence of t s on the cell voltage V C. (c) Temperature dependence of the R ON and R OFF of the Ag/a-LSMO/Pt memory cell. α denotes the temperature coefficient resistance. (d) R ON and I RESET in dependence on the CC, indicating the multibit storage capability.
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