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Quasi-two-dimensional electron gas behavior in doped LaAlO3 thin films on SrTiO3 substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

Chemical and magnetic characterization of a 1.5 nm thick Tm doped LAO film through XAS and XMCD at 15 K. XAS (above) shows the M5 transition of Tm. XMCD (below) demonstrates magnetic response from the Tm ions in the film in an applied field of 0.5 T.

Image of FIG. 2.
FIG. 2.

Temperature dependent behavior of the (a) sheet resistance, (b) sheet carrier concentration, (c) mobility in Tm doped, Lu doped, and undoped films. The carrier concentration roughly saturates at high temperatures to within approximately a third of the value predicted by the polar catastrophe. The mobility is fit to a power law above 60 K indicating the dominance of phonon dependent scattering. Note that the doped films do not lead to appreciably lower mobility at low temperature where defects would be expected to dominate the scattering.

Image of FIG. 3.
FIG. 3.

Thickness dependence of the carrier concentration at 300 K for Tm and Lu doped LaAlO3 films on SrTiO3.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quasi-two-dimensional electron gas behavior in doped LaAlO3 thin films on SrTiO3 substrates