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The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
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Image of FIG. 1.
FIG. 1.

AFM images representing the surface topography of high-Al-content Al0.77Ga0.23N layers grown at the low growth rate of ∼360 nm/h, high process temperature of 1100 °C and: (a) [Si] ∼ 3 × 1018 cm−3; (b) [Si] ∼ 2 × 1019 cm−3. Scan size of both images is 2×2 μm2. The rms value over the 2×2 μm2 scan is 0.30 nm and 0.25 nm, respectively.

Image of FIG. 2.
FIG. 2.

Plots of silicon incorporation in two sets of high-Al-content AlxGa1−xN (x ∼ 0.77) layers. The set of layers L1-to-L4 is grown at ∼360 nm/h. The set of layers T1-to-T4 is grown at ∼760 nm/h. The concentration of the incorporated O is indicated for the layers L1, L2, and L2*.

Image of FIG. 3.
FIG. 3.

Pits of bright contrast and cracks on the panchromatic CL image of high-Al-content AlxGa1−xN layer heavily doped to [Si] ∼ 1 × 1020 cm−3 (the layer T4 in terms of the labels in Fig. 2 ). The bar scale corresponds to 10 μm.

Image of FIG. 4.
FIG. 4.

EPR spectra measured at 5 K for B||c in darkness and under illumination with white light in Al0.77Ga0.23N:Si layers characterized by: (i) smooth and pit-free morphology, and comparable Si and O atomic concentrations of ∼2 × 1018 cm−3 (the layer L1 in terms of the labels in Fig. 2 ); and (ii) pit-populated morphology (the layer T1 in terms of the labels in Fig. 2 ).

Image of FIG. 5.
FIG. 5.

Ratio of carrier concentration (n) to the total concentration of incorporated Si and O atoms, n/([Si] + [O]), vs. the increase of atomic concentration of major impurities O and C as measured by SIMS.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN