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NBTIS results of IGZO TFTs for the post-annealing condition of (a) air at 0.1 MPa, (b) N2 + H2O (10%) at 0.1 MPa, and (c) N2 + H2O (10%) at 0.5 MPa.
Hump occurrence and simulated transfer curves on the IGZO TFTs in dark and in light.
Subgap DOS of the donor-like states of the IGZO TFT in dark and in light.
Variations in μSAT, VTH, and S. S. values of IGZO TFTs with different conditions under NBTIS for 2 h.
Extracted parameters of IGZO TFTs in dark and in light by TCAD simulation in Fig. 3 .
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