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Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing
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10.1063/1.4801436
/content/aip/journal/apl/102/14/10.1063/1.4801436
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/14/10.1063/1.4801436

Figures

Image of FIG. 1.
FIG. 1.

NBTIS results of IGZO TFTs for the post-annealing condition of (a) air at 0.1 MPa, (b) N2 + H2O (10%) at 0.1 MPa, and (c) N2 + H2O (10%) at 0.5 MPa.

Image of FIG. 2.
FIG. 2.

Hump occurrence and simulated transfer curves on the IGZO TFTs in dark and in light.

Image of FIG. 3.
FIG. 3.

Subgap DOS of the donor-like states of the IGZO TFT in dark and in light.

Tables

Generic image for table
Table I.

Variations in μSAT, VTH, and S. S. values of IGZO TFTs with different conditions under NBTIS for 2 h.

Generic image for table
Table II.

Extracted parameters of IGZO TFTs in dark and in light by TCAD simulation in Fig. 3 .

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/content/aip/journal/apl/102/14/10.1063/1.4801436
2013-04-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/14/10.1063/1.4801436
10.1063/1.4801436
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