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Band diagrams of an InAs/GaSb superlattice (a) without interfacial treatment and (b) with a forced 2.4 Å InSb interface. Strained conduction (green) and valence (red) band edges are shown. The first conduction (C1, blue) and heavy-hole (HH1, black) minibands are calculated by the 8-band method and displayed as horizontal lines.
Plot of the modeled carrier collection probability based on carrier position for a representative transverse EBIC experiment. The x coordinate represents distance parallel to the device growth direction, and the z coordinate represents distance from the sidewall of the device. The area between x = 0 and x = 0.5 μm represents a lightly doped absorber region. At x = 0, the majority carriers switch from holes to electrons, and thus carriers along that boundary are considered to have a collection probability of 1.
Measured EBIC signal vs. beam position for two InAs/Gasb T2SL p-π-n devices, grown using no interfacial treatment (square, blue) and with a forced 2.4 Å InSb interfacial layer (cross, red). Also shown are the computed fits for each data set (dashed).
Arrhenius plots of measured R0A products of InAs/GaSb T2SL p-π-n devices grown (a) without interfacial treatment and (b) with a forced 2.4 Å InSb interfacial layer. The experimental data (circle, square) were collected for square devices fabricated with electrical areas of (300 μm)2 and (400 μm)2. The fitted slopes of the data (dashed) denote temperature-dependent behavior in the high and low temperature regimes.
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