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Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control
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10.1063/1.4801764
/content/aip/journal/apl/102/14/10.1063/1.4801764
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/14/10.1063/1.4801764
/content/aip/journal/apl/102/14/10.1063/1.4801764
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/content/aip/journal/apl/102/14/10.1063/1.4801764
2013-04-10
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/14/10.1063/1.4801764
10.1063/1.4801764
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