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Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control
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10.1063/1.4801764
/content/aip/journal/apl/102/14/10.1063/1.4801764
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/14/10.1063/1.4801764
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Figures

Image of FIG. 1.
FIG. 1.

Band diagrams of an InAs/GaSb superlattice (a) without interfacial treatment and (b) with a forced 2.4 Å InSb interface. Strained conduction (green) and valence (red) band edges are shown. The first conduction (C1, blue) and heavy-hole (HH1, black) minibands are calculated by the 8-band method and displayed as horizontal lines.

Image of FIG. 2.
FIG. 2.

Plot of the modeled carrier collection probability based on carrier position for a representative transverse EBIC experiment. The x coordinate represents distance parallel to the device growth direction, and the z coordinate represents distance from the sidewall of the device. The area between x = 0 and x = 0.5 μm represents a lightly doped absorber region. At x = 0, the majority carriers switch from holes to electrons, and thus carriers along that boundary are considered to have a collection probability of 1.

Image of FIG. 3.
FIG. 3.

Measured EBIC signal vs. beam position for two InAs/Gasb T2SL p-π-n devices, grown using no interfacial treatment (square, blue) and with a forced 2.4 Å InSb interfacial layer (cross, red). Also shown are the computed fits for each data set (dashed).

Image of FIG. 4.
FIG. 4.

Arrhenius plots of measured R0A products of InAs/GaSb T2SL p-π-n devices grown (a) without interfacial treatment and (b) with a forced 2.4 Å InSb interfacial layer. The experimental data (circle, square) were collected for square devices fabricated with electrical areas of (300 μm)2 and (400 μm)2. The fitted slopes of the data (dashed) denote temperature-dependent behavior in the high and low temperature regimes.

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/content/aip/journal/apl/102/14/10.1063/1.4801764
2013-04-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/14/10.1063/1.4801764
10.1063/1.4801764
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