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High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
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10.1063/1.4801861
/content/aip/journal/apl/102/14/10.1063/1.4801861
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/14/10.1063/1.4801861
/content/aip/journal/apl/102/14/10.1063/1.4801861
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/content/aip/journal/apl/102/14/10.1063/1.4801861
2013-04-11
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/14/10.1063/1.4801861
10.1063/1.4801861
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