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Second harmonic spectra from as-deposited 46.2 at. % Si content silicon nitride after pumping with excitation wavelengths between 750 and 900 nm. All data have been taken at the same pumping power (1 W).
Pump power dependence (log scale) of the emission peaked at 375 nm (750 nm excitation wavelength) from as-deposited silicon nitride with 46.2 at. % Si content. The continuous line is the best fit of the experimental data. (Inset) Measured second harmonic wavelength as a function of the excitation wavelength for the same sample. The continuous line is the linear fit of the experimental data.
Second harmonic power detected after pumping with different excitation wavelengths with the same pumping power as a function of the Si content.
Second harmonic power detected after pumping with different excitation wavelengths with the same pumping power as a function of the annealing temperature for the sample with 46.2 at. % Si content. (Inset) SH spectra for the as grown sample, with (black line) and without (red line) a 30 nm-thick SiO2 cap layer.
Polar plots of the second harmonic intensity (arbitrary units) generated at a pumping wavelength of 800 nm in samples with different Si content, as-deposited. The pump polarization is changed and the detection polarization fixed at the s (red dots) and p (blue circles) polarization components. 0° corresponds to p-polarized pumping light; 90° to s-polarized pump.
Measured optical energy gap, linear refraction index at 400 and 800 nm, SHG efficiencies, and calculated χ(2) tensorial elements for the different silicon contents in sub-stoichiometric silicon nitride thin films.
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