Full text loading...
(a) TEM image of a Ge0.964Sn0.036 film on (100)-oriented Ge substrate with defect free GeSn/Ge interface. (b) Measured 2θ-ω scan pattern around (004) diffraction order of the GeSn film by HR-XRD.
(a) Schematic cross section of a vertical GeSn/Ge p-i-n diode with optical window. (b) Top view of a GeSn p-i-n PD.
(a) I-V characteristics of the devices with different mesa diameters under darkness. (b) Dark current density (J Total) as a function of 1/D at bias voltages of −1.0 and −3.0 V, where D is the device mesa diameter.
(a) I-V characteristics under darkness and with illumination by 1550 and 1640 nm laser (the power for both is 0.5 mW). Inset: Responsivity of the detector versus bias voltage at 1640 nm. (b) GeSn PD responsivity versus wavelength; scatter diagrams represent the responsivities measured by a 1310 nm laser and a tunable laser (1440 nm–1640 nm) at −3 and 0 V; two curves reveal spectral responsivity (800 nm–2200 nm) at 0 and −3 V, respectively.
Information on thin films from HR-XRD and RBS.
Article metrics loading...