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Schematic description of the confocal micro photoluminescence setup. The μPL measurements were performed through the polished chip side surface in order to obtain an individual investigation of the p, i, and n layers. The focus point was adjusted to around 2 μm depth underneath the chip surface to avoid effects arising from surface band bending.
Structure and basic properties of the fabricated diamond PIN junction diode. (a) Detailed structure of PIN diode and optical microscope image after metallization process. The concentration of doping atoms was evaluated by secondary ion mass spectroscopy, and the thickness of each layer is calibrated from the increment of crystal weight before and after CVD growth. (b) Typical current-voltage (I-V) property obtained at room temperature. Solid and broken lines indicate the data for forward and reverse bias conditions, respectively. (c) Typical electroluminescence spectra obtained at a injection current of 10 and 100 mA, respectively. The peaks consist of the free exciton recombination FE around 235 nm, the band-A emission around 430 nm, the H3 emission related nitrogen defects around 503 nm, and the neutral NV0 emission around 575 nm.
μPL spectra obtained from the polished chip side surface of PIN junction diode. The excitation wavelength is 532 nm. (a) Variation of the μPL spectra as a function of the detection point along the diode growth direction in 1 μm steps from the n-type to the p-type surface. (b) Confocal μPL mapping image of NV− emission detected through the band-pass filter between 633 and 728 nm. The mapping area extends over 40 × 40 μm with a special resolution of less than 0.5 μm.
Change of the μPL spectra as a function of applied bias voltage from 0 to +35 V in 5 V steps (a), and normalized μPL spectra of the NV− and NV0 emissions at applied bias voltage of 0 and +35 V (b).
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