banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

(a) STM images of the Ge(001) surface after GeOI sample preparation; (b) Raman spectra of doped GeOI and of reference unprocessed GeOI and Ge samples; (c) 31P, O, and Ge SIMS depth profiles of a single-δ-layer (left panel) and a quadri-δ-layer (right panel).

Image of FIG. 2.
FIG. 2.

(a) Optical microscope image of a trench isolated Hall bar (upper panel) and schematics of the Ohmic contacted samples A, B, and C (lower panel); (b) longitudinal sheet resistivities and (c) Hall resistance of samples A (black), B (red), and C (blue) as a function of applied perpendicular magnetic field at T = 4.2 K; (d) electrically active 2D and 3D electron density and (e) mobility as a function of dopant profile full width at half maximum.

Image of FIG. 3.
FIG. 3.

Temperature dependence of (a) sheet zero-magnetic-field resistivity, (b) electron density, (c) mobility, (f) phase breaking time of GeOI doped layers, (d) the relative change in resistance, and (e) temperature dependence of magnetoconductance curves, experiments, and weak localization theoretical fits.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic layer doping of strained Ge-on-insulator thin films with high electron densities