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Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
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10.1063/1.4801981
/content/aip/journal/apl/102/15/10.1063/1.4801981
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/15/10.1063/1.4801981
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) STM images of the Ge(001) surface after GeOI sample preparation; (b) Raman spectra of doped GeOI and of reference unprocessed GeOI and Ge samples; (c) 31P, O, and Ge SIMS depth profiles of a single-δ-layer (left panel) and a quadri-δ-layer (right panel).

Image of FIG. 2.
FIG. 2.

(a) Optical microscope image of a trench isolated Hall bar (upper panel) and schematics of the Ohmic contacted samples A, B, and C (lower panel); (b) longitudinal sheet resistivities and (c) Hall resistance of samples A (black), B (red), and C (blue) as a function of applied perpendicular magnetic field at T = 4.2 K; (d) electrically active 2D and 3D electron density and (e) mobility as a function of dopant profile full width at half maximum.

Image of FIG. 3.
FIG. 3.

Temperature dependence of (a) sheet zero-magnetic-field resistivity, (b) electron density, (c) mobility, (f) phase breaking time of GeOI doped layers, (d) the relative change in resistance, and (e) temperature dependence of magnetoconductance curves, experiments, and weak localization theoretical fits.

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/content/aip/journal/apl/102/15/10.1063/1.4801981
2013-04-15
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/15/10.1063/1.4801981
10.1063/1.4801981
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