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RHEED images taken along  and  azimuths of Si(100): (a) treated Si substrate, (b) TiN deposited at 750 °C, (d) F400 sample, (f) F500 sample, and (h) F600 sample. (c), (e), (g), and (i) show the AFM images of respective samples.
X-ray diffraction patterns of all samples in θ-2θ mode. Inset shows the FWHM of Fe3O4 (400) peak. Peak marked by “*” is from Si substrate, also reported previously (Ref. 8 ).
Experimental (coloured line) and simulated (black line) specular XRR profiles for the three samples. Inset shows the layer-model used for simulation.
Raman spectra of all samples recorded at room temperature. Lorentzian line shape fitting for the T2g and A1g modes are shown in the insets.
Magnetization vs temperature (ZFC-FC) curves recorded at applied field of 200 Oe for (a) F400 sample, (b) F500 sample, and (c) F600 sample; corresponding insets show the dM/dT curves. (d) In-plane M-H measurements of all samples at room temperature.
Simulation results of specular XRR measurements.
Fitting line shape parameters of A1g and T2g modes obtained for F400, F500, and F600 samples.
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