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Hole transport in single crystal synthetic diamond at low temperatures
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematics of the time-of-flight setup used in the experiment.

Image of FIG. 2.
FIG. 2.

Measured hole drift velocities vs. applied electric field in the interval 10-80 K for sample A (510 μm thickness). Inset: current traces measured at 30 K for 25, 40, 60, 85, 115 V/cm, respectively.

Image of FIG. 3.
FIG. 3.

Comparison of experimental hole drift velocity data from two samples, at 10 K and 80 K, with Monte-Carlo simulations. Data were obtained from two different samples, demonstrating reproducibility of the velocity measurements. The dotted lines are traces from MC simulations including acoustic phonon scattering only. The solid lines are from MC simulations including both acoustic and optical phonon scattering. Inset: an iso-energy surface of the heavy-hole band, illustrating the pronounced valence band warping in diamond.

Image of FIG. 4.
FIG. 4.

Carrier temperature from MC simulations for a lattice temperature of 10 K and 80 K, respectively (same simulations as in Fig. 3 ). Dotted lines assume acoustic phonon scattering only, solid lines assume both acoustic and optical phonon scattering. Inset: the hole wave vector distribution along the field direction for E = 2000 V/cm and 80 K lattice temperature.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole transport in single crystal synthetic diamond at low temperatures