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(a) XRD results for 50 nm-thick TiO2−x layers resulting from various RTA temperature conditions after application of different DC power levels during the deposition process. (b) Transfer curves (IDS/VGS) of RTA-processed TiOx TFTs as a function of DC power conditions. Except for pristine TiO2−x, all of the IDS/VGS curves of TiOx TFTs were obtained with an identical RTA process at 400 °C.
(a) XAS of the O K edge and (b) core Ti 2p level spectra obtained from TiOx layers after the RTA process at 400 °C as a function of DC power.
Enlarged TEM images and FFT patterns obtained from (a) pristine TiO2−x layer and annealed TiO2−x after the RTA process at 400 °C as a function of DC power: (b) 110 W, (c) 130 W, and (d) 150 W.
(a) IDS/VGS curves and (b) electrical parameters of TiOx TFT devices fabricated with 150 W DC power with 400 °C RTA annealing conditions with respect to RTA duration time (s).
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