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d-orbital ordering of oxygen-deficient amorphous and anatase TiO2−x channels for high mobility thin film transistors
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10.1063/1.4802717
/content/aip/journal/apl/102/15/10.1063/1.4802717
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/15/10.1063/1.4802717
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Figures

Image of FIG. 1.
FIG. 1.

(a) XRD results for 50 nm-thick TiO2−x layers resulting from various RTA temperature conditions after application of different DC power levels during the deposition process. (b) Transfer curves (IDS/VGS) of RTA-processed TiOx TFTs as a function of DC power conditions. Except for pristine TiO2−x, all of the IDS/VGS curves of TiOx TFTs were obtained with an identical RTA process at 400 °C.

Image of FIG. 2.
FIG. 2.

(a) XAS of the O K edge and (b) core Ti 2p level spectra obtained from TiOx layers after the RTA process at 400 °C as a function of DC power.

Image of FIG. 3.
FIG. 3.

Enlarged TEM images and FFT patterns obtained from (a) pristine TiO2−x layer and annealed TiO2−x after the RTA process at 400 °C as a function of DC power: (b) 110 W, (c) 130 W, and (d) 150 W.

Image of FIG. 4.
FIG. 4.

(a) IDS/VGS curves and (b) electrical parameters of TiOx TFT devices fabricated with 150 W DC power with 400 °C RTA annealing conditions with respect to RTA duration time (s).

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/content/aip/journal/apl/102/15/10.1063/1.4802717
2013-04-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: d-orbital ordering of oxygen-deficient amorphous and anatase TiO2−x channels for high mobility thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/15/10.1063/1.4802717
10.1063/1.4802717
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