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Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) RHEED and (b) LEED patterns, taken at 10 keV and 30 eV respectively, from an epitaxial Bi2Se3 on singular InP(111) substrate. Note the 3-fold symmetry pattern in (b) and asymmetrical RHEED streaks in (a),signaling a single domain epilayer. STM micrographs at different magnifications of the same sample, showing the wedding cake mounds pointed along the same direction (c) and large terraces composing the sidewalls of the mounds.

Image of FIG. 2.
FIG. 2.

STM image of a surface following 0.1 QLs Bi2Se3 deposition on a flat InP(111), where the nucleated islands (arrow pointed, for example) are seen to decorate ascending steps on substrate.

Image of FIG. 3.
FIG. 3.

(a) STM image showing a film of Bi2Se3 grown on very flat InP substrate via the island nucleation mode, as implied by the RHEED intensity oscillations shown in the inset. (b) The corresponding LEED pattern (taken at 30 eV) showing the six-fold rotation symmetry.

Image of FIG. 4.
FIG. 4.

(a) Electron density map of Bi2Se3 on a flat InP(111)A obtained from the first principles calculations. (b) Stick-and-ball model illustrating the interface between a stepped InP(111)A substrate and epitaxial Bi2Se3, where the chemical interaction between In and Se atoms on the flat terrace and the possible chemical bonding between P and Bi at step edges provide the lattice constraints for a single domain Bi2Se3 epifilm.

Image of FIG. 5.
FIG. 5.

(a) Normalized magnetoresistance measured at 2 K at different titled angles θ of the B field relative to the film plane as defined in the inset. (b) Derivative magnetoresistance plotted as a function of inverse magnetic field, revealing SdH oscillations at different tilted angles of the B field.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy