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High speed photodetectors based on a two-dimensional electron/hole gas heterostructure
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10.1063/1.4802595
/content/aip/journal/apl/102/16/10.1063/1.4802595
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/16/10.1063/1.4802595
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Figures

Image of FIG. 1.
FIG. 1.

(a) Cross section of 2DEHG wafer with built in DBR, indicating δ-doping layers and contacts. (b) Simulated band structure of the 2DEHG, arrows indicate the location of each well. (c) Photoluminescence signal from substrates with an underlying DBR (solid) and without (dashed) at room temperature. Incident excitation wavelength and intensity are 488 nm and approximately 20 mW/cm2, respectively.

Image of FIG. 2.
FIG. 2.

(a) Normalized high speed response of detector with an underlying DBR for four incident powers at 10 V bias and 830 nm (b) Normalized high speed response of device without an underlying DBR for four separate powers at 10 V and 830 nm. FWHM values and the fall times to 5% of maximum are shown in insets (a) and (b), respectively, for DBR+ (solid) and DBR− (dashed).

Image of FIG. 3.
FIG. 3.

High speed response of 2 μm gap devices at 10 V bias and 1 mW incident power. Normalized frequency response of the traces shown is provided in the inset.

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/content/aip/journal/apl/102/16/10.1063/1.4802595
2013-04-23
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High speed photodetectors based on a two-dimensional electron/hole gas heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/16/10.1063/1.4802595
10.1063/1.4802595
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