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Radio-frequency amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance
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10.1063/1.4803050
/content/aip/journal/apl/102/16/10.1063/1.4803050
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/16/10.1063/1.4803050
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Figures

Image of FIG. 1.
FIG. 1.

(a) Concept of the proposed device with the measurement circuit. The FMR in the free layer of the MTJ is induced by an RF magnetic field due to the application of an RF signal from port-1 of the VNA. Under DC bias, the MTJ produces an RF output, which is applied to port-2 of the VNA. The VNA measures the S21 (=Vout/Vin) parameter, which represents the gain factor. (b) Schematic image of the configuration of magnetization and magnetic fields. Mfree and Mpin denote the magnetization of the free and pinned layer; θ tilt and θ field indicate the relative angle and the angle of the external magnetic field; and h RF, H ext, and H shift indicate the RF magnetic field, the external magnetic field, and shifted field, respectively.

Image of FIG. 2.
FIG. 2.

(a) Typical MR curve (θ field = 0°). (b) Gain factor (absolute value [ΔS21]) as a function of frequency (θ field = 55°). (c) Resonant frequency as a function of the external magnetic field (θ field = 55°). The black dots and red curve show the experimental results and the fitting curve, respectively.

Image of FIG. 3.
FIG. 3.

S21_max as functions of θ field and H ext. (a) Experimental result and (b) simulated result.

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/content/aip/journal/apl/102/16/10.1063/1.4803050
2013-04-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Radio-frequency amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/16/10.1063/1.4803050
10.1063/1.4803050
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