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Atomic-level quantized reaction of HfOx memristor
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10.1063/1.4802821
/content/aip/journal/apl/102/17/10.1063/1.4802821
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/17/10.1063/1.4802821
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Quantization reaction for a memristor, compared with continuous reaction. The inset diagram in the bottom part is an illustration to indicate the discontinuous resistance variation due to quantized atomic reaction during reset process.

Image of FIG. 2.
FIG. 2.

Memristor operation procedure. The inset in the upper left shows the schematic of the set procedure and the inset in the lower right presents the schematic of the reset procedure.

Image of FIG. 3.
FIG. 3.

Different resistance states with effective thickness and energy barrier height. The inset shows the resistance switching procedure which transforms from LRS to HRS, and the distance between filament tip and TiN electrode increases with raising reset voltage.

Image of FIG. 4.
FIG. 4.

Filament 3D simulation diagram. The inset at lower right shows the hexagonal-close-packed structure, where the light blue region is the effective cross section area of each atom.

Image of FIG. 5.
FIG. 5.

Atomic-level quantized reaction. The inset shows the numbers of effective cross section atom after reaction.

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/content/aip/journal/apl/102/17/10.1063/1.4802821
2013-04-29
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic-level quantized reaction of HfOx memristor
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/17/10.1063/1.4802821
10.1063/1.4802821
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