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Quantization reaction for a memristor, compared with continuous reaction. The inset diagram in the bottom part is an illustration to indicate the discontinuous resistance variation due to quantized atomic reaction during reset process.
Memristor operation procedure. The inset in the upper left shows the schematic of the set procedure and the inset in the lower right presents the schematic of the reset procedure.
Different resistance states with effective thickness and energy barrier height. The inset shows the resistance switching procedure which transforms from LRS to HRS, and the distance between filament tip and TiN electrode increases with raising reset voltage.
Filament 3D simulation diagram. The inset at lower right shows the hexagonal-close-packed structure, where the light blue region is the effective cross section area of each atom.
Atomic-level quantized reaction. The inset shows the numbers of effective cross section atom after reaction.
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