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Enhanced detection of NO2 with recessed AlGaN/GaN open gate structures
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View: Figures


Image of FIG. 1.
FIG. 1.

Effect of open gate area recessing on NO2 response. Five devices (1–5) with decreasing thickness of the AlGaN layer were exposed to 500 ppb of NO2 in N2 at 84% RH. The AlGaN thickness was derived from the predetermined etch rate. Inset: response time t 90 as function of AlGaN thickness d. t 90 was defined as the time needed for the device current to reach 90% of its steady-state value after NO2 exposure. Schematic: device structure with recessed open gate area.

Image of FIG. 2.
FIG. 2.

Effect of humidity on NO2 response. Device 5 was exposed to 500 ppb NO2 in N2 at different relative humidity levels. Note that the time scales before and after the axis break are different.

Image of FIG. 3.
FIG. 3.

(a) Response of device 4 to decreasing concentrations of NO2 in N2 at 50% RH. The inset shows a zoom of the response to 7 ppb. (b) Response corresponding to (a) as a function of concentration for three different exposure times. (c) Response and recovery of device 4 from a 10 ppb NO2 exposure in N2 at 50% RH. During recovery, the device was subjected to a series of short NO2 exposures with increasing concentration in 1 ppb steps. The resulting responses are shown enlarged in the inset with the start of each response shifted to t = 0 s. (d) Response of device 4 to NO2 in air at 50% RH to stepwise increasing concentrations. The inset shows the response as function of concentration both for increasing and decreasing steps.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced detection of NO2 with recessed AlGaN/GaN open gate structures