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(a) The contour map of the unstrained VBO between Al x Ga1 − x As1 − y Sb y and InAs as functions of the Al (x) and the Sb (y) contents. (b) A schematic of band alignment for AlGaAsSb-capped InAs/GaAs QDs. (c) The PL spectra measured at K for the GaAs-capped and AlGaAsSb-capped InAs QDs with different Al contents (x).
(a) The ground state PL peak energies as a function of . (b) Time-resolved PL spectra for the investigated samples. (c) The ground state PL peak energies as a function of Al contents (x). (d) The estimated wave function overlaps according to the measured decay lifetimes.
(a)-(d) The calculated wave function distributions for the hole ground state on the (1–10) plane for different Al contents ( ) in the CL. (e)–(h) The calculated band structures along the growth direction through the center of the QD (solid line, A) and through the CL near the QD base (dotted line, B).
Arrhenius plot of the integrated PL intensity for GaAs-capped and AlGaAsSb-capped InAs QDs with . The inset shows the PL spectra measured at room temperature.
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