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Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer
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10.1063/1.4803013
/content/aip/journal/apl/102/17/10.1063/1.4803013
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/17/10.1063/1.4803013
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Figures

Image of FIG. 1.
FIG. 1.

(a) The contour map of the unstrained VBO between Al x Ga1 x As1 y Sb y and InAs as functions of the Al (x) and the Sb (y) contents. (b) A schematic of band alignment for AlGaAsSb-capped InAs/GaAs QDs. (c) The PL spectra measured at K for the GaAs-capped and AlGaAsSb-capped InAs QDs with different Al contents (x).

Image of FIG. 2.
FIG. 2.

(a) The ground state PL peak energies as a function of . (b) Time-resolved PL spectra for the investigated samples. (c) The ground state PL peak energies as a function of Al contents (x). (d) The estimated wave function overlaps according to the measured decay lifetimes.

Image of FIG. 3.
FIG. 3.

(a)-(d) The calculated wave function distributions for the hole ground state on the (1–10) plane for different Al contents ( ) in the CL. (e)–(h) The calculated band structures along the growth direction through the center of the QD (solid line, A) and through the CL near the QD base (dotted line, B).

Image of FIG. 4.
FIG. 4.

Arrhenius plot of the integrated PL intensity for GaAs-capped and AlGaAsSb-capped InAs QDs with . The inset shows the PL spectra measured at room temperature.

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/content/aip/journal/apl/102/17/10.1063/1.4803013
2013-04-29
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/17/10.1063/1.4803013
10.1063/1.4803013
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