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Raman spectra of graphene showing G and 2D peaks. The 2D-peak was fitted (solid line) with a single Lorentzian function. Inset: AFM topographic images of van-der-Pauw test structure (left) and the graphene surface after annealing (right).
Typical current-voltage characteristics of a graphene sensor device before and after N2/H2 annealing at 400 °C for 30 min. A 90% decrease in the device electrical resistance was observed after the thermal treatment.
The chemical sensing behavior of epitaxial graphene sensors to the saturated vapors of polar protic and polar aprotic chemicals in the ambient atmosphere.
Relationship between the dipole moment and the magnitude of sensor response. Inset: variation in carrier density with increasing dipole moment.
Noise spectra of epitaxial graphene in air and during exposure to (a) H2O2 and (b) EG vapors.
Change in noise amplitude and Hooge parameter as a function of dipole moment and induced carrier density.
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