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Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors
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10.1063/1.4803536
/content/aip/journal/apl/102/17/10.1063/1.4803536
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/17/10.1063/1.4803536
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Figures

Image of FIG. 1.
FIG. 1.

Transfer characteristics a-IGZO TFTs and schematic cross section of the device in inset.

Image of FIG. 2.
FIG. 2.

(a) Transfer characteristics of a-IGZO TFTs under positive bias stress of 20 V and under negative bias stress of −20 V in inset. (b) The applied constant gate bias were 10, 20, or 40 V, respectively, while the source and drain electrodes were grounded.

Image of FIG. 3.
FIG. 3.

Along-range Zni migration through VO along the a-axis. The location of VO is referenced as a center in the a-axis, and Zni is reduced in size to avoid the crowdedness (see Ref. 19 ).

Image of FIG. 4.
FIG. 4.

The Auger ZnL3M4.5M4.5 spectra of the IGZO films (a) before and (b) after the constant gate bias stress, respectively.

Image of FIG. 5.
FIG. 5.

(a) Energy band diagram of a-IGZO TFT before and after the constant gate bias stress and (b) schematic cross section of the device with two parallel current paths under the constant gate bias stress.

Image of FIG. 6.
FIG. 6.

Diode characteristics of a-IGZO TFT were measured by varying the drain voltage from 0 V to 2 V while the gate electrode was floated. The constant gate bias stress of (a) 20 V and (b) 30 V was applied while the source and drain electrode was grounded.

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/content/aip/journal/apl/102/17/10.1063/1.4803536
2013-04-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/17/10.1063/1.4803536
10.1063/1.4803536
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