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Transfer characteristics a-IGZO TFTs and schematic cross section of the device in inset.
(a) Transfer characteristics of a-IGZO TFTs under positive bias stress of 20 V and under negative bias stress of −20 V in inset. (b) The applied constant gate bias were 10, 20, or 40 V, respectively, while the source and drain electrodes were grounded.
Along-range Zni migration through VO along the a-axis. The location of VO is referenced as a center in the a-axis, and Zni is reduced in size to avoid the crowdedness (see Ref. 19 ).
The Auger ZnL3M4.5M4.5 spectra of the IGZO films (a) before and (b) after the constant gate bias stress, respectively.
(a) Energy band diagram of a-IGZO TFT before and after the constant gate bias stress and (b) schematic cross section of the device with two parallel current paths under the constant gate bias stress.
Diode characteristics of a-IGZO TFT were measured by varying the drain voltage from 0 V to 2 V while the gate electrode was floated. The constant gate bias stress of (a) 20 V and (b) 30 V was applied while the source and drain electrode was grounded.
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