Full text loading...
X-ray diffraction patterns of the pure and hydrogen doped ZnO thin films recorded in θ-2θ mode.
Variation of room temperature resistivity, mobility, and carrier concentration with working pressure in hydrogen doped ZnO thin films.
Resistivity behavior ρ(T) of (a) undoped and (b)-(e) hydrogen doped ZnO thin films in the range of 300 K to 20 K. The red solid line in (d) and (e) is a fit using Eq. (1) .
The variation of the relative area of PL-peaks, Apeak/ATotal plotted as a function of the working pressure for P1, P2, P3, and P4 peaks.
Fitting parameters of ZnO (S1) and ZnO:H (S2 and S3) thin films.
Article metrics loading...