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Hydrogen incorporation induced metal-semiconductor transition in ZnO:H thin films sputtered at room temperature
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10.1063/1.4803667
/content/aip/journal/apl/102/17/10.1063/1.4803667
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/17/10.1063/1.4803667

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of the pure and hydrogen doped ZnO thin films recorded in θ-2θ mode.

Image of FIG. 2.
FIG. 2.

Variation of room temperature resistivity, mobility, and carrier concentration with working pressure in hydrogen doped ZnO thin films.

Image of FIG. 3.
FIG. 3.

Resistivity behavior ρ(T) of (a) undoped and (b)-(e) hydrogen doped ZnO thin films in the range of 300 K to 20 K. The red solid line in (d) and (e) is a fit using Eq. (1) .

Image of FIG. 4.
FIG. 4.

The variation of the relative area of PL-peaks, Apeak/ATotal plotted as a function of the working pressure for P1, P2, P3, and P4 peaks.

Tables

Generic image for table
Table I.

Fitting parameters of ZnO (S1) and ZnO:H (S2 and S3) thin films.

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/content/aip/journal/apl/102/17/10.1063/1.4803667
2013-04-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hydrogen incorporation induced metal-semiconductor transition in ZnO:H thin films sputtered at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/17/10.1063/1.4803667
10.1063/1.4803667
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