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Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models
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10.1063/1.4803916
/content/aip/journal/apl/102/17/10.1063/1.4803916
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/17/10.1063/1.4803916
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The schematics of the RT-immobilized AlGaN/GaN HEMT sensor. (b) The plan-view microphotograph of the device.

Image of FIG. 2.
FIG. 2.

The real time detection of the inhibitor at constant bias of 500 mV for the sensor. 18

Image of FIG. 3.
FIG. 3.

(a) The current changes at different inhibitor concentrations from the sensors in linear scale. (b) The current changes at different inhibitor concentrations from the sensors in log scale. In (a) and (b), the blue circles and the black squares represent current changes from the real sensor (RT-immobilized HEMT) and the background test (without-RT-immobilized HEMT), respectively.

Image of FIG. 4.
FIG. 4.

(a) The curve of surface coverage ratio as a function of the inhibitor concentration for a one-binding-site model. (b) The linear regression using Langmuir adsorption isotherm.

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/content/aip/journal/apl/102/17/10.1063/1.4803916
2013-05-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/17/10.1063/1.4803916
10.1063/1.4803916
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