Full text loading...
(a) The schematics of the RT-immobilized AlGaN/GaN HEMT sensor. (b) The plan-view microphotograph of the device.
The real time detection of the inhibitor at constant bias of 500 mV for the sensor. 18
(a) The current changes at different inhibitor concentrations from the sensors in linear scale. (b) The current changes at different inhibitor concentrations from the sensors in log scale. In (a) and (b), the blue circles and the black squares represent current changes from the real sensor (RT-immobilized HEMT) and the background test (without-RT-immobilized HEMT), respectively.
(a) The curve of surface coverage ratio as a function of the inhibitor concentration for a one-binding-site model. (b) The linear regression using Langmuir adsorption isotherm.
Article metrics loading...