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(a) XRD θ-2θ scans of CFO films deposited on STO(001) substrates at 5 Hz and different temperatures. (b) CFO film roughness obtained by AFM at the different temperatures and laser repetition rates. Red line connects temperature series at 5 Hz, black line frequency series at 600 °C. (c)and (d) Schematic summary of surface roughness and film texture vs. growth parameters. (e)–(g) Selected topographic AFM (5 × 5 μm2, insets are 1 × 1 μm2) images of films grown at different laser repetition rates and temperatures: (e) 1 Hz, 750 °C; (f) 1 Hz, 600 °C; and (g) 5 Hz, 600 °C.
(a) From left to right: RHEED patterns of the STO substrate and LSMO, CFO, and BTO layers recorded during growth of a BTO/CFO/LSMO heterostructure. (b)–(d) Intensity of the RHEED specular spot during growth of LSMO, CFO, and BTO, respectively. The inset in (d) shows intensity oscillations after growth interruption for several minutes. (e) Topographic AFM (5 × 5 μm2) image. Inset: 2D autocorrelation of the topographic image. Bottom panel shows an amplified 500 × 500 nm region of the surface with height profile along the marked line.
Analysis of the in-plane lattice parameters as a function of the layer thickness during the growth of BTO/CFO/LSMO/STO heterostructures: (a) and (c) CFO on LSMO and (b) and (d) BTO on CFO. The starting point is the RHEED pattern recorded after deposition of a LSMO bottom electrode and is shown as inset (c), the intensity was recorded along the marked dashed line. (a) and (b) Selected lines labelled with the corresponding layer thickness and in (c) and (d) the derived in-plane lattice parameter of CFO (a) and BTO (b) are plotted.
(a) XRD θ/2θ scan of a BTO/CFO/LSMO/STO(001) sample with thickness of 25 and 100 nm for BTO and CFO, respectively. Vertical lines mark the position of CFO(004) and BTO(002) reflections in bulk. A zoom of the scan, around CFO(004) and BTO(002) reflections, is shown in (b). (c) XRD reciprocal lattice maps around the (103) reflections of STO, LSMO, and BTO and the (206) of CFO. The symbol + marks the position of BTO(103) reflection in bulk.
(a) I-V cycle and (b) P-V polarization loop of a BTO/CFO/LSMO/STO(001) sample with thickness of BTO and CFO 25 and 100 nm, respectively.
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