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Measured relative change of reflectivity using the TRPP for Al-GST according to the sample temperature.
Experimental data (circles) and simulation (line) using the known GST thermal conductivity and the identified TBR for the 3 crystalline states in the ns; inset is the relative sensitivity of relatively to the TBR at the Al-GST interface according to the GST state and considering thermal properties in Table I .
Identified TBR at the Al-GST interface according to the sample temperature (blue diamond), high temperature asymptotic DMM theoretical values (red squares), and high temperature asymptotic DMM theoretical values with interfacial layer (grey dot).
ToF-SIMS for the as-deposited (ad) amorphous GST with Al capped layer and the annealed sample at 400 °C (GST in hcp phase). Dashed line locates the perfectly flat ideal interface and the gray area evidenced the interface width.
Normalized acoustic vibrations in the 0-25 ps time range for Al on GST according to the GST crystalline phase and temperature. Measurement (blue cross) and simulation (red line).
Band-gap Eg , grain size g, phonon group longitudinal ( ), and transverse ( ) velocities, specific heat per unit volume (Cp ), Debye temperature ( ) for GST (α, fcc, and hcp), Al and GST atomic density (n), density (ρ), thermal conductivity k, and acoustic impedance (Z).
Measured TBR (from identification based on the heat transfer model and TRPP data), theoretical phonon transmission coefficient ( ), calculated thermal resistance at the interface ( ) using the asymptotic relation at high temperature, measured average roughness (Ra ) on GST alone and on Al, measured oscillation frequency (fexp ), acoustic reflection coefficients ( ), phonon transmission coefficient ( ) from acoustic TRPP data and massless spring ( ) per unit length of the interfacial layer.
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