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The phosphorus concentration depends on the depth with variable diffusion time simulated by the phosphorus diffusion model with the phosphorus doping level of 4.01 × 1018 cm−3 in our experiment.
(a) SIMS depth profile of phosphorus in Ge epilayer for the samples. The opened circle for sample A and opened triangle for sample B. The solid lines represent best fits from the diffusion model. (b) SIMS depth profile of phosphorus and boron in the n/p Ge homojunction of sample C without a 90 nm intrinsic Ge layer.
SIMS depth profile of phosphorus and boron in the n/p Ge homojunction of sample D with a 90 nm intrinsic Ge layer.
Comparison of I-V characteristics of n/p junctions for sample C and D.
Comparison of diffusivity from literature with various experimental techniques at 500 °C.
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