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In situ doped phosphorus diffusion behavior in germanium epilayer on silicon substrate by ultra-high vacuum chemical vapor deposition
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10.1063/1.4804204
/content/aip/journal/apl/102/18/10.1063/1.4804204
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/18/10.1063/1.4804204

Figures

Image of FIG. 1.
FIG. 1.

The phosphorus concentration depends on the depth with variable diffusion time simulated by the phosphorus diffusion model with the phosphorus doping level of 4.01 × 10 cm in our experiment.

Image of FIG. 2.
FIG. 2.

(a) SIMS depth profile of phosphorus in Ge epilayer for the samples. The opened circle for sample A and opened triangle for sample B. The solid lines represent best fits from the diffusion model. (b) SIMS depth profile of phosphorus and boron in the n/p Ge homojunction of sample C without a 90 nm intrinsic Ge layer.

Image of FIG. 3.
FIG. 3.

SIMS depth profile of phosphorus and boron in the n/p Ge homojunction of sample D with a 90 nm intrinsic Ge layer.

Image of FIG. 4.
FIG. 4.

Comparison of I-V characteristics of n/p junctions for sample C and D.

Tables

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Table I.

Comparison of diffusivity from literature with various experimental techniques at 500 °C.

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/content/aip/journal/apl/102/18/10.1063/1.4804204
2013-05-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ doped phosphorus diffusion behavior in germanium epilayer on silicon substrate by ultra-high vacuum chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/18/10.1063/1.4804204
10.1063/1.4804204
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