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Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene
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10.1063/1.4804432
/content/aip/journal/apl/102/18/10.1063/1.4804432
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/18/10.1063/1.4804432
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of top-gated SLG. A vacuum gap of separates the SLG from the top and bottom oxides. The substrate is assumed to be semi-infinite while the top oxide has a thickness of . The top oxide is capped with metal which is assumed to be an ideal conductor. The impurities are assumed to be in the graphene plane.

Image of FIG. 2.
FIG. 2.

The dispersion of the five IPP branches (from bottom to top, IPP to IPP) in solid lines, with IPP being the lowest branch, for a 20-nm HfO top-gated SLG at  = 10 cm. The asymptotes corresponding to the uncoupled SPP branches and the graphene plasmon are drawn in dashed and dotted lines, respectively. The effects of Landau damping are ignored here.

Image of FIG. 3.
FIG. 3.

Plot of the electron-IPP coupling coefficient ( ) for the lowest IPP branch for (a) and (b) 20 nm at  = 10 cm (dotted line), 10 cm (dotted-dashed line) and 10 cm (dashed line). The insets show the corresponding electron-SPP coupling coefficient ( ), corresponding to at zero carrier density.

Image of FIG. 4.
FIG. 4.

Calculated (a) , and (b) (open symbols) and (solid symbols) vs. at  = 10 cm for HfO (squares), -BN (triangles) and AlO (circles). The mobility decreases with increasing .

Image of FIG. 5.
FIG. 5.

Calculated (a) , and (b) (open symbols) and (solid symbols) vs. at  = 10 cm for HfO (squares), -BN (triangles) and AlO (circles). The mobilities for HfO and AlO increase with increasing at small .

Image of FIG. 6.
FIG. 6.

Calculated (a) , and (b) (open symbols) and (solid symbols) vs. at  = 10 cm for HfO (squares), -BN (triangles) and AlO (circles). The inset in (b) shows a magnified plot of . There is no significant dependence on .

Image of FIG. 7.
FIG. 7.

Calculated vs. carrier density for a 100 nm thick HfO top gate at different temperatures. The temperature-induced change in mobility becomes smaller as carrier density increases.

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/content/aip/journal/apl/102/18/10.1063/1.4804432
2013-05-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/18/10.1063/1.4804432
10.1063/1.4804432
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