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Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p +-Si heterostructured devices: Energy transfer from ZnO host to erbium ions
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10.1063/1.4804626
/content/aip/journal/apl/102/18/10.1063/1.4804626
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/18/10.1063/1.4804626
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Figures

Image of FIG. 1.
FIG. 1.

(a) XRD patterns of the ZnO:Er films with different Er contents, annealed at 700 °C for 2 h under O ambient. (b) A representative HRTEM image of the ZnO:Er (1.7%) film on a silicon substrate, annealed at 700 °C for 2 h under O ambient.

Image of FIG. 2.
FIG. 2.

(a) PL spectra for the ZnO:Er films with different Er contents, annealed at 700 °C for 2 h under O ambient. (b) PLE spectrum monitoring the emission at ∼1.54 m for the ZnO:Er (0.9%) film annealed at 700 °C for 2 h under O ambient. (c) Schematic diagram for the proposed energy transfer process in the case of PL from the ZnO:Er film.

Image of FIG. 3.
FIG. 3.

(a) EL spectra acquired with the same injection current for the ZnO:Er/ -Si heterostructured devices using the ZnO:Er films with different Er contents. (b) EL spectra for the ZnO:Er(0.9%)/ -Si heterostructured device under different injection currents. (c) The characteristic of the ZnO:Er(0.9%)/ -Si heterostructured device.

Image of FIG. 4.
FIG. 4.

Schematic diagram for the energy band structure of the ZnO:Er/ -Si heterostructured device under forward bias and the transfer of energy released from the defect-assisted indirect recombination in the ZnO host to the incorporated Er ions, accompanied with the excitation and de-excitation processes occurring in the Er ions.

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/content/aip/journal/apl/102/18/10.1063/1.4804626
2013-05-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/18/10.1063/1.4804626
10.1063/1.4804626
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