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Tuning near field radiation by doped silicon
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10.1063/1.4804631
/content/aip/journal/apl/102/18/10.1063/1.4804631
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/18/10.1063/1.4804631

Figures

Image of FIG. 1.
FIG. 1.

(a) Local density of states at a distance of 50 nm from the surfaces of SiO (black curve) and arsenic-doped n-type silicon (all other curves) with different carrier concentrations (unit, /cm). (b) Local density of states at a distance of 50 nm from the surfaces of SiO (black curve) and boron-doped p-type silicon (all other curves) with different carrier concentrations (unit, /cm).

Image of FIG. 2.
FIG. 2.

(a) The optical image of the microsphere. (b) The relative position between a bulk silicon sample and the probe. (c) The 1D roughness (the orange curve) is obtained by subtracting the 1D waviness (the red curve) from the 1D texture (the black curve) of the microsphere surface.

Image of FIG. 3.
FIG. 3.

(a) Calculated near field conductance curves corresponding to the five bulk silicon samples at different carrier concentrations. (b) Measured near field conductance curves corresponding to the five bulk silicon samples. The measurement uncertainty is estimated to be ∼0.5 nW/K in terms of the noise level of deflection signals, the error in cantilever calibration, etc.

Tables

Generic image for table
Table I.

Hall effect measurements of five different samples.

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/content/aip/journal/apl/102/18/10.1063/1.4804631
2013-05-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tuning near field radiation by doped silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/18/10.1063/1.4804631
10.1063/1.4804631
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