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Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
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10.1063/1.4804546
/content/aip/journal/apl/102/19/10.1063/1.4804546
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4804546
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Figures

Image of FIG. 1.
FIG. 1.

AFM image (a), high resolution Raman map of the out plane mode intensity (b), and a backscatter FE-SEM image (c) of a typical MoS crystal.

Image of FIG. 2.
FIG. 2.

I-V characteristics taken at V = 1 V for various temperatures (a), (c) and I-V characteristics at 300 K (b), (d) for the same L/W = 400 nm/1000 nm transistor before (a), (b) and after (c), (d) the deposition of a 15 nm ALD AlO overcoat.

Image of FIG. 3.
FIG. 3.

Field effect mobility measured for the same L/W = 800 nm/1000 nm at V = 0.5 V before and after the deposition of a 15 nm ALD AlO overcoat; the inset shows an optical micrograph of our finished device.

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/content/aip/journal/apl/102/19/10.1063/1.4804546
2013-05-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4804546
10.1063/1.4804546
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