1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Long electron spin coherence in ion‐implanted GaN: The role of localization
Rent:
Rent this article for
USD
10.1063/1.4804558
/content/aip/journal/apl/102/19/10.1063/1.4804558
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4804558
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Time‐integrated PL spectra for different Ga implantation densities . The inset shows the spectrally integrated PL transient for the highest implanted Ga density .

Image of FIG. 2.
FIG. 2.

Normalized TRKR transients for different Ga implantation densities .

Image of FIG. 3.
FIG. 3.

(a) Spin relaxation times (filled symbols) and (open symbols) for zero magnetic field and T, respectively, as a function of the Ga implantation density . (b) Ratio of the spin relaxation times. The dashed line indicates the value for DP relaxation.

Image of FIG. 4.
FIG. 4.

(a) Magnetic field dependence of the spin relaxation time for different Ga implantation densities. (b) Magnetic field dependence of the spin relaxation time for . The dashed lines mark the zero‐field value and the value predicted by DP theory. (c) Magnetic field dependence of for the highest implanted Ga density . The solid line is a fit to Eq. (4) .

Image of FIG. 5.
FIG. 5.

(a) Spin relaxation times (filled symbols) and (open symbols) for zero magnetic field and T, respectively, as a function of the Au implantation density . (b) Ratio of the spin relaxation times. The dashed line indicates the value for DP relaxation. (c) Spin relaxation times and (d) ratio β for the rescaled implanted density in comparison to the values for Ga implantation.

Loading

Article metrics loading...

/content/aip/journal/apl/102/19/10.1063/1.4804558
2013-05-13
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Long electron spin coherence in ion‐implanted GaN: The role of localization
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4804558
10.1063/1.4804558
SEARCH_EXPAND_ITEM