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Electron transport in nano-scaled piezoelectronic devices
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10.1063/1.4804601
/content/aip/journal/apl/102/19/10.1063/1.4804601
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4804601
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Figures

Image of FIG. 1.
FIG. 1.

Stacked DFT DOS and DFT/TB bandstructure comparison. (a) DOS within muffin-tin radius of Sm/Se and interstitial DOS. (b) DOS within Se atom decomposed by angular momentum. (c) DOS within Sm atom decomposed by angular momentum. (d) Band structure by spdfs*_SO TB model without strain (black) and DFT band structure without strain (red). E = 0 at top of valence band.

Image of FIG. 2.
FIG. 2.

Comparison of bandgap modulations with strain calculated by DFT and TB. (a) Bandgap extracted from DFT and TB bandstructure under hydrostatic and uniaxial strain. (b) TB bandstructure with ε = −3% compressive hydrostatic strain (a = a = a = (1 + ε) × a). (c) TB bandstructure with ε = −3% compressive uniaxial strain in growth direction (a = (1 + ε) × a; a = a = a). Dashed lines show bulk band edges in (b, c).

Image of FIG. 3.
FIG. 3.

Transport simulation for SmSe with hydrostatic strain. (a) Simulated structure in and 6 nm channel super cell in transport simulation. (b) Real and imaginary band structure for 0% and −3% hydrostatic strain. (c) Transmission with 0 V and 0.05 V linear drop potential. (d) Vd = 0.05 V, spectral current, , with linear drop potential.

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/content/aip/journal/apl/102/19/10.1063/1.4804601
2013-05-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron transport in nano-scaled piezoelectronic devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4804601
10.1063/1.4804601
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