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Increased open-circuit voltage in a Schottky device using PbS quantum dots with extreme confinement
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10.1063/1.4804614
/content/aip/journal/apl/102/19/10.1063/1.4804614
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4804614
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Absorption spectra of PbS NQDs dispersed in tetrachloroethylene (TCE).

Image of FIG. 2.
FIG. 2.

(a) PbS NQDs Schottky photovoltaic architecture. (b) Cross sectional SEM image of Schottky solar cell. (c) Current-voltage characteristics of the solar cell device using PbS NQDs with 3.5 nm in diameter showing the highest efficiency under AM 1.5 illumination.

Image of FIG. 3.
FIG. 3.

Variation of key solar cells parameters ((a) V, (b) J, (c) FF, and (d) PCE) with PbS NQDs of bandgap energy.

Image of FIG. 4.
FIG. 4.

(a) Current-voltage characteristics for film-thickness dependency with PbS NQDs in bandgap of 2.2 eV (blue) and 1.2 eV (red). (b) Schematic equilibrium band diagram with PbS NQDs in bandgap of 2.2 eV (left) and 1.2 eV (right). Depletion region is d-W and d-W at x-axis, respectively.

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/content/aip/journal/apl/102/19/10.1063/1.4804614
2013-05-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Increased open-circuit voltage in a Schottky device using PbS quantum dots with extreme confinement
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4804614
10.1063/1.4804614
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