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Direct graphene synthesis on SiO2/Si substrate by ion implantation
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10.1063/1.4804982
/content/aip/journal/apl/102/19/10.1063/1.4804982
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4804982
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Figures

Image of FIG. 1.
FIG. 1.

(a) XRD spectra of Ni films implanted with various ion fluences; (b) graphene on Ni surface; (c) SEM images of the graphene surface on Ni implanted with 12 × 10 C-atoms/cm; (e)-(h) EDS mapping for Ni, Si, C, and O elements in the region shown in (d).

Image of FIG. 2.
FIG. 2.

(a) Raman spectra of graphene on the top of Ni layer before and after O plasma etching, and graphene on SiO/Si after removing Ni; (b) SEM image of graphene on SiO/Si substrate. The ion dose of the samples is 4 × 10 cm.

Image of FIG. 3.
FIG. 3.

XPS spectra of graphene on SiO and Ni surfaces.

Image of FIG. 4.
FIG. 4.

(a) Raman spectra of graphene on SiO; the ion doses are 6 × 10 cm for (b) and 1.6 × 10 cm for (c) and (d); (b) Raman intensity ratio mapping of G/D over 2.8 × 2.8 m; (c) cross-section HRTEM image of graphene on Ni surface; and (d) plan view HRTEM image of graphene flakes directly grown SiO.

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/content/aip/journal/apl/102/19/10.1063/1.4804982
2013-05-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct graphene synthesis on SiO2/Si substrate by ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4804982
10.1063/1.4804982
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