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(a) XRD spectra of Ni films implanted with various ion fluences; (b) graphene on Ni surface; (c) SEM images of the graphene surface on Ni implanted with 12 × 1015 C-atoms/cm−2; (e)-(h) EDS mapping for Ni, Si, C, and O elements in the region shown in (d).
(a) Raman spectra of graphene on the top of Ni layer before and after O2 plasma etching, and graphene on SiO2/Si after removing Ni; (b) SEM image of graphene on SiO2/Si substrate. The ion dose of the samples is 4 × 1015 cm−2.
XPS spectra of graphene on SiO2 and Ni surfaces.
(a) Raman spectra of graphene on SiO2; the ion doses are 6 × 1015 cm−2 for (b) and 1.6 × 1016 cm−2 for (c) and (d); (b) Raman intensity ratio mapping of G/D over 2.8 × 2.8 μm2; (c) cross-section HRTEM image of graphene on Ni surface; and (d) plan view HRTEM image of graphene flakes directly grown SiO2.
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