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Theoretical model of superconducting spintronic SIsFS devices
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10.1063/1.4805032
/content/aip/journal/apl/102/19/10.1063/1.4805032
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4805032
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic design of SIsFS Josephson junction. Solid line demonstrates typical distribution of pair potential along the structure. It reaches bulk values in the S electrodes, is suppressed in the middle s layer and vanishes in the ferromagnetic region F. The characteristic length scales are also marked in the figure: is the London penetration depth and is the coherence length typical for niobium.

Image of FIG. 2.
FIG. 2.

Characteristic voltage of the SIsFS structures versus thickness of the F-layer for different thicknesses of the middle superconducting film at . Short-dashed straight line shows the product of the tunnel SIS junction at the same temperature. Interface parameters: and at the sF and FS interfaces.

Image of FIG. 3.
FIG. 3.

The temperature dependence of characteristic voltage of SIsFS structure for different values of exchange field in the F-layer. The short-dashed line demonstrates the dependence characteristic for a conventional tunnel SIS junction. It is seen how the exchange field H shifts the effective critical temperature , corresponding to the switching of the s-layer from the superconducting state to the normal one. The circles show measured in Nb-Al/AlO-Nb-PdFe-Nb junctions, proving the existence of effective critical temperature in these samples.

Image of FIG. 4.
FIG. 4.

The dependence of characteristic voltage on F-layer thickness in the SIsFS structure with the s-layer in the superconducting state. Inset shows the current-phase relation in the vicinity of the first transition. Switching from 0 to state in the mode (1a) preserves the value of critical current as well as characteristic voltage .

Image of FIG. 5.
FIG. 5.

Experimental dependence of critical current versus increasing (open circles) and decreasing (open squares) external magnetic field . Solid and dashed lines present the microscopic fitting of the data. Inset shows the theoretical and experimental magnetization loops versus external magnetic field

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/content/aip/journal/apl/102/19/10.1063/1.4805032
2013-05-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Theoretical model of superconducting spintronic SIsFS devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4805032
10.1063/1.4805032
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