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Schematic design of SIsFS Josephson junction. Solid line demonstrates typical distribution of pair potential along the structure. It reaches bulk values in the S electrodes, is suppressed in the middle s layer and vanishes in the ferromagnetic region F. The characteristic length scales are also marked in the figure: is the London penetration depth and is the coherence length typical for niobium.
Characteristic voltage of the SIsFS structures versus thickness of the F-layer LF for different thicknesses of the middle superconducting film Ls at . Short-dashed straight line shows the product of the tunnel SIS junction at the same temperature. Interface parameters: and at the sF and FS interfaces.
The temperature dependence of characteristic voltage of SIsFS structure for different values of exchange field H in the F-layer. The short-dashed line demonstrates the dependence characteristic for a conventional tunnel SIS junction. It is seen how the exchange field H shifts the effective critical temperature , corresponding to the switching of the s-layer from the superconducting state to the normal one. The circles show measured in Nb-Al/AlO x -Nb-Pd0.99Fe0.01-Nb junctions, 16 proving the existence of effective critical temperature in these samples.
The dependence of characteristic voltage on F-layer thickness LF in the SIsFS structure with the s-layer in the superconducting state. Inset shows the current-phase relation in the vicinity of the first transition. Switching from 0 to state in the mode (1a) preserves the value of critical current IC as well as characteristic voltage .
Experimental dependence 16 of critical current IC versus increasing (open circles) and decreasing (open squares) external magnetic field Hext . Solid and dashed lines present the microscopic fitting of the data. Inset shows the theoretical and experimental magnetization loops versus external magnetic field
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