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Light absorption enhancement in closely packed Ge quantum dots
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10.1063/1.4805356
/content/aip/journal/apl/102/19/10.1063/1.4805356
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4805356
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic and cross sectional bright-field transmission electron microscopy (BF-TEM) images of Ge QDs multilayered samples with different thicknesses of SiO barrier. TEM images indicated by the red arrows show the details of the deeper four QDs films in 3 nm and 9 nm samples. (b)RBS spectra performed on Ge QDs samples with different thickness of the SiO barrier.

Image of FIG. 2.
FIG. 2.

(a) Atomic absorption cross section (σ) spectra for Ge QDs multilayers with different SiO barrier, together with the σ spectra of amorphous bulk Ge. (b) Tauc plot (symbols) and corresponding linear fits (lines) for Ge QDs arranged in multilayers and amorphous bulk Ge film.

Image of FIG. 3.
FIG. 3.

(a) Experimental values of energy gap (E, squares) and (b) absorption efficiency (B*, squares) of Ge QDs arranged in multilayers with different SiO barrier thicknesses. For comparison the E and B* values are reported for amorphous bulk Ge (rectangles) and Ge QDs in a single layer (star) configuration.

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/content/aip/journal/apl/102/19/10.1063/1.4805356
2013-05-14
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Light absorption enhancement in closely packed Ge quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4805356
10.1063/1.4805356
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