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Self-consistently calculated conduction band structures and relevant squared envelope functions of one period for samples A and B. (a) and (b) correspond to samples A and B, respectively.
Photocurrent response curves for samples A and B as a function of temperature.
I-V-curves for samples A and B at different temperatures under dark conditions. (a) and (b) correspond to samples A and B, respectively. Insets: R 0 A extracted from I–V measurements versus inverse temperature, namely Arrhenius plot.
Johnson noise limited detectivities D*J at different temperatures for samples A and B.
Layer thicknesses for one period of the active regions of samples A and B in angstroms along with the simulated detection energy E12. Bold numbers stand for In0.53Ga0.47As wells, and roman numbers stand for In0.52Al0.48As barriers. Underlining means doping density of 1.2 × 1017 cm−3.
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