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Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold
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10.1063/1.4807122
/content/aip/journal/apl/102/19/10.1063/1.4807122
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4807122
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Figures

Image of FIG. 1.
FIG. 1.

C-HRTEM micrographs of the investigated InGaN QWs sample acquired at an accelerating voltage of 80 kV before and after surface cleaning. (a) Image showing the top of the sample prepared by FIB milling. The contrast variations correspond to surface damage caused by ion-milling. (b)Approximately the same region as shown in (a) after a chemical etch in KOH followed by plasma cleaning. This protocol is effective in removing surface amorphization caused by Ga implantation during sample preparation by FIB.

Image of FIG. 2.
FIG. 2.

Time-series of the top three InGaN QWs separated by GaN barriers acquired by C-STEM at 120 kV at (a)  = 0 min and (b)  = 16 min. (c) Higher magnification image of the middle QW showing that there are no In-rich clusters present in the InGaN QWs. Together, these images confirm that there is no beam induced damage at 120 kV.

Image of FIG. 3.
FIG. 3.

and extracted from low-loss EELS data plotted as a function of scan position. Lack of variations in 1 and 2, corresponding to extracted values of two different GaN barriers, along the scan direction confirm the validity and reproducibility of our methodology. Low-loss EELS line scans in the two QW regions show that the compositional variation corresponding to the shift in Δ is <5.4%.

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/content/aip/journal/apl/102/19/10.1063/1.4807122
2013-05-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/19/10.1063/1.4807122
10.1063/1.4807122
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