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Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold
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10.1063/1.4807122
Abstract
The high intensity of light emitted in In x Ga1− x N/GaN heterostructures has been generally attributed to the formation of indium-rich clusters in In x Ga1− x N quantum wells (QWs). However, there is significant disagreement about the existence of such clusters in as-grown In x Ga1− x N QWs. We employ atomically resolved CS-corrected scanning transmission electron microscopy and electron energy loss spectroscopy at 120 kV—which we demonstrate to be below the knock-on displacement threshold—and show that indium clustering is not present in as-grown In0.22Ga0.78N QWs. This artifact-free, atomically resolved method can be employed for investigating compositional variations in other In x Ga1− x N/GaN heterostructures.
© 2013 AIP Publishing LLC
Received Tue Apr 23 00:00:00 UTC 2013
Accepted Mon Apr 29 00:00:00 UTC 2013
Published online Thu May 16 00:00:00 UTC 2013
Acknowledgments:
The authors acknowledge Professor Colin J. Humphreys for providing the samples and Dr. Dong Su and Professor Marc Baldo for useful discussions. This work was supported by The Center for Excitonics, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award No. DE-SC0001088. The research at the Center for Functional Nanomaterials, Brookhaven National Laboratory was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886. The authors acknowledge access to Shared Experimental Facilities provided by the MIT Center for Materials Science Engineering supported in part by the MRSEC Program of the National Science Foundation under Award No. DMR-0213282.
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