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Schematic of the considered SNSCs with rectangular cross-section; (a) without nanoshell and (b) with dielectric nanoshell. The device dimensions, doping types of the photoactive layers, and field compositions of TE and TM incidences have been shown.
2D images of Qabs vs λ and W [(a) and (b)], the dependence of mean(Qabs) on W [(c) and (d)], and Qabs spectra with two W values [(e) and (f) where 125 nm for ● and 250 nm for ▪]. The SNSC considered has no shell layer. In these figures, (a), (c), and (e) for TE incidence; (b), (d), and (f) for TM incidence.
2D images of Qabs vs λ and ds [(a) and (b)], the dependence of mean (Qabs) on ds [(c) and (d)], and Qabs spectra under various system configurations [(e) and (f) where ds = 175 nm for , ▪ is from Fig. 2 , and a circular system with an identical photoactive volume is included for comparison). The SNSC considered has a nanoshell layer with thickness ds to be optimized, where W = 250 nm according to Fig. 2 . In these figures, (a), (c), and (e) for TE incidence; (b), (d), and (f) for TM incidence.
EQE response of the designed nanoshelled GaAs SNSCs with W = 250 nm and ds = 175 nm under TE and TM incidences, respectively. The averaged EQE, i.e., (TE + TM)/2, has also been given. The corresponding results with the presence of a glass substrate have been plotted in dashed curves. The spatial profiles of carrier concentration, hole concentration, and electrostatic potential under λ = 400 nm, calculated from comprehensive device simulation for SCs, have been shown.
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