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Influence of Pb doping on the electrical transport properties of BiCuSeO
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The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1− x Pb x CuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1− x Pb x CuSeO (x = 0.03) reaches 5.3 μW cm−1 K−2 at 873 K. The influence of Pb 2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr2+ doping, which could be beneficial to the thermoelectric performances.
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